1 Answer
An **Insulated Gate Bipolar Transistor (IGBT)** is a **bipolar** device with a **unipolar gate drive**.
- It has a **bipolar** conduction mechanism because its main current flow is due to both **electrons (majority carriers in n-type regions)** and **holes (majority carriers in p-type regions)**. This gives it **low conduction losses** like a **BJT**.
- However, it has a **unipolar gate drive**, meaning it is controlled by the **electric field** like a **MOSFET**, leading to **high input impedance** and **low gate drive power**.
Thus, an IGBT is a **bipolar device with MOSFET-like gate control**, combining the advantages of both **BJTs** and **MOSFETs**.
- It has a **bipolar** conduction mechanism because its main current flow is due to both **electrons (majority carriers in n-type regions)** and **holes (majority carriers in p-type regions)**. This gives it **low conduction losses** like a **BJT**.
- However, it has a **unipolar gate drive**, meaning it is controlled by the **electric field** like a **MOSFET**, leading to **high input impedance** and **low gate drive power**.
Thus, an IGBT is a **bipolar device with MOSFET-like gate control**, combining the advantages of both **BJTs** and **MOSFETs**.