A Schottky diode is also commonly known as a **Schottky barrier diode (SBD)**. The term "Schottky diode" is derived from the Schottky barrier, which is a metal-semiconductor junction that forms the basis of this type of diode. This barrier is responsible for the diode's unique characteristics, such as low forward voltage drop and fast switching speeds.
The Schottky diode is named after the German physicist Walter H. Schottky, who contributed to the understanding of metal-semiconductor junctions in the early 20th century.
### Key Features of Schottky Diodes:
- **Low Forward Voltage Drop**: Typically between 0.15 to 0.45 volts, much lower than the 0.7 volts typical for a standard silicon diode. This results in higher efficiency in low-voltage applications.
- **Fast Switching Speed**: Schottky diodes have a very short recovery time, making them suitable for high-frequency applications.
- **Low Reverse Leakage Current**: While Schottky diodes do have some reverse leakage, it is typically much lower than in standard pn-junction diodes.
They are commonly used in power rectifiers, radio frequency (RF) applications, and circuits where fast switching is important.