Ohm's Law states that the current flowing through a conductor between two points is directly proportional to the voltage across the two points, provided the temperature and material properties remain constant. Mathematically, it's expressed as \( V = IR \), where \( V \) is voltage, \( I \) is current, and \( R \) is resistance.
However, not all electrical devices obey Ohm's Law. Devices that do not follow this law are typically those where resistance changes with voltage or current, or those that have nonlinear voltage-current characteristics. Here are two common examples:
### 1. **Diodes**
**Description**: A diode is a semiconductor device that allows current to flow in one direction only. It has a characteristic curve where the relationship between the voltage across it and the current flowing through it is nonlinear.
**Why It Doesn't Obey Ohm's Law**: For diodes, the current-voltage relationship is exponential rather than linear. In the forward-biased condition (where the diode is conducting), the current increases exponentially with the increase in voltage after surpassing a certain threshold voltage (typically about 0.7 volts for silicon diodes). In the reverse-biased condition (where the diode blocks current flow), the current remains very small and nearly constant regardless of the voltage until breakdown occurs.
**Characteristic Curve**: The current-voltage (I-V) characteristic of a diode is described by the Shockley diode equation:
\[ I = I_s \left(e^{\frac{V}{nV_T}} - 1\right) \]
where \( I_s \) is the saturation current, \( V \) is the voltage across the diode, \( V_T \) is the thermal voltage, and \( n \) is the ideality factor.
### 2. **Transistors**
**Description**: Transistors are semiconductor devices used to amplify or switch electronic signals. There are various types, such as bipolar junction transistors (BJTs) and field-effect transistors (FETs).
**Why They Don't Obey Ohm's Law**: Transistors have nonlinear characteristics. In a BJT, for example, the relationship between the base current (I_B) and the collector current (I_C) is not linear; it's exponential due to the transistor’s active region. The collector-emitter voltage (V_CE) and collector current (I_C) also do not follow Ohm’s Law, as the transistor’s behavior depends on the control signal applied to the base (in BJTs) or gate (in FETs). The transfer characteristics of a transistor are governed by more complex relationships involving the transistor’s parameters and operating conditions.
**Characteristic Curves**:
- For BJTs, the collector current is related to the base current and the collector-emitter voltage through the transistor's current gain (\( \beta \)) and is described by the Ebers-Moll model.
- For FETs, the drain current (\( I_D \)) is related to the gate-source voltage (\( V_{GS} \)) and the drain-source voltage (\( V_{DS} \)), and it’s often described by quadratic or exponential equations depending on the operating region (linear or saturation).
In both cases, the voltage-current relationship is not straightforward and linear, thus not adhering to Ohm's Law.