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Describe the operation of a field-effect transistor (FET).

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A field-effect transistor (FET) is a type of transistor that controls current using an electric field. Here’s a breakdown of its operation:

### Structure
FETs have three main terminals:
1. **Source (S)**: Where current enters the device.
2. **Drain (D)**: Where current exits.
3. **Gate (G)**: Controls the conductivity between the source and drain.

### Operation
1. **Basic Principle**: FETs operate by varying the voltage applied to the gate terminal. This voltage creates an electric field that influences the flow of charge carriers (electrons or holes) between the source and drain.

2. **Types of FETs**:
   - **n-channel FET**: Uses electrons as charge carriers. When a positive voltage is applied to the gate, it attracts electrons from the source, forming a conductive channel to the drain.
   - **p-channel FET**: Uses holes (positive charge carriers). A negative gate voltage attracts holes from the source to form the conductive channel.

3. **Threshold Voltage (V_th)**: This is the minimum gate voltage required to create a conductive channel. Below this voltage, the FET remains off, and no current flows from drain to source.

4. **Operation Modes**:
   - **Cut-off Region**: Gate voltage is below V_th; the transistor is off.
   - **Linear (or Ohmic) Region**: Gate voltage is above V_th; the transistor allows current to flow, behaving like a resistor.
   - **Saturation Region**: At a certain point, increasing the gate voltage further does not significantly increase the drain current; the FET is fully on.

5. **Applications**: FETs are widely used in amplifiers, switches, and digital circuits due to their high input impedance and efficiency.

### Summary
FETs control current flow through the manipulation of an electric field generated by the gate voltage, making them essential components in modern electronic devices.
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A Field-Effect Transistor (FET) is a type of transistor that controls current flow through a semiconductor channel by varying an electric field. Here’s a detailed explanation of its operation:

### Basic Structure

1. **Channel**: The main part of a FET is the semiconductor channel through which current flows. This channel can be made of materials such as silicon.

2. **Source**: This is one of the terminals of the FET where the current enters the channel.

3. **Drain**: This is the terminal where the current exits the channel.

4. **Gate**: The gate is the terminal that controls the flow of current between the source and the drain. By applying a voltage to the gate, you can control the conductivity of the channel.

### Types of FETs

There are different types of FETs, including:

- **Junction FET (JFET)**: Has a channel that is controlled by a reverse-biased pn-junction.
- **Metal-Oxide-Semiconductor FET (MOSFET)**: Uses an insulating layer (often silicon dioxide) between the gate and the channel.

### Operation of a JFET

1. **Depletion Mode**: In a JFET, the gate is used to control the size of the channel. When the gate-source voltage (\( V_{GS} \)) is zero, the channel is open, allowing current to flow from the source to the drain. When a negative voltage is applied to the gate relative to the source, it creates an electric field that narrows the channel, reducing the current flow. If the gate voltage becomes large enough, it can completely pinch off the channel, stopping current flow.

2. **Pinch-Off Voltage**: This is the voltage at which the channel becomes fully depleted and the current flow stops. For a JFET in depletion mode, this is the critical voltage level where the channel is completely closed.

### Operation of a MOSFET

1. **Enhancement Mode**: In MOSFETs, the gate is separated from the channel by a thin insulating layer. When the gate-source voltage (\( V_{GS} \)) is below a certain threshold voltage (\( V_{th} \)), the channel is not conductive. Applying a voltage greater than \( V_{th} \) creates an electric field that attracts charge carriers (electrons or holes) to form a conductive channel between the source and drain.

2. **Threshold Voltage**: This is the minimum gate-source voltage required to create a conductive channel in the MOSFET. Once the gate voltage exceeds this threshold, the channel starts to conduct, and the current between the source and drain increases with increasing gate voltage.

3. **Saturation Mode**: When a MOSFET is in saturation mode, the drain current is mostly controlled by the gate-source voltage and is relatively independent of the drain-source voltage. This is useful for amplification applications.

4. **Cutoff Mode**: If the gate-source voltage is below the threshold, the MOSFET is in cutoff mode, and the channel is non-conductive, so no current flows between the source and drain.

### Summary

In essence, FETs are voltage-controlled devices. By varying the voltage applied to the gate, you can control the flow of current between the source and drain. This characteristic makes FETs useful in various applications, including amplification, switching, and signal modulation.
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