A Zener diode is specifically doped to achieve a high level of impurity concentration in its p-n junction. This heavy doping is crucial for its operation in the breakdown region. Hereβs why:
1. **Controlled Breakdown Voltage**: The high doping level in a Zener diode results in a very narrow depletion region. This allows the Zener diode to have a precisely controlled breakdown voltage. When the reverse voltage reaches this specific Zener breakdown voltage, the diode starts to conduct in the reverse direction.
2. **Zener Breakdown Mechanism**: For Zener diodes operating at lower breakdown voltages (below approximately 5.6V), the Zener breakdown mechanism (quantum mechanical tunneling) dominates. Heavy doping enhances the electric field in the narrow depletion region, facilitating this tunneling effect.
3. **Avalanche Breakdown**: For higher breakdown voltages, the diode operates based on avalanche breakdown, where the high doping level helps achieve the high electric fields needed to accelerate charge carriers, causing a chain reaction of ionization.
4. **Stability and Precision**: Heavy doping ensures that the breakdown voltage remains stable and consistent over a range of operating conditions, providing reliable voltage regulation in circuits.
Overall, the doping process is crucial for defining the operational characteristics of the Zener diode and ensuring its functionality as a voltage regulator.