A **Zener diode** and a **PN junction diode** are both semiconductor devices, but they are designed for different purposes and have distinct characteristics. Let's break down the differences between the two:
### 1. **Basic Structure**:
- **PN Junction Diode**: A standard PN junction diode is made by joining a **P-type** semiconductor (with an abundance of holes) and an **N-type** semiconductor (with an abundance of electrons). This forms a **PN junction**, where the electric field created at the junction allows current to flow in one direction (forward bias) and blocks it in the opposite direction (reverse bias).
- **Zener Diode**: A Zener diode is a special type of diode that is designed to work in the **reverse breakdown region**. It has a heavily doped PN junction, which creates a **thin depletion region** that allows it to conduct in reverse bias when the voltage exceeds a certain **Zener voltage**. Unlike the regular diode, it is specifically engineered to break down and allow current to flow in the reverse direction when the voltage reaches this breakdown value.
### 2. **Operating Characteristics**:
- **PN Junction Diode**:
- In forward bias (positive voltage on the P-side), it conducts current easily once the voltage exceeds a threshold (typically around 0.7V for silicon diodes).
- In reverse bias (positive voltage on the N-side), it blocks current, and only a very small reverse leakage current may flow. If the reverse voltage exceeds the **reverse breakdown voltage**, the diode can get damaged unless it's specifically designed to handle it (like the Zener diode).
- **Zener Diode**:
- A Zener diode is typically used in reverse bias and is designed to allow current to flow when the reverse voltage reaches or exceeds a certain threshold, known as the **Zener voltage** (e.g., 5.1V, 12V, etc.). This is a controlled breakdown condition.
- When reverse voltage is applied, and it exceeds the Zener voltage, the diode enters the breakdown region, and the current is conducted in the reverse direction. This is a controlled and non-destructive breakdown, allowing the Zener diode to regulate voltage.
### 3. **Voltage-Current Characteristics**:
- **PN Junction Diode**:
- **Forward Bias**: The current increases exponentially with the forward voltage.
- **Reverse Bias**: The current is ideally zero until the reverse breakdown voltage is reached, at which point the diode may get damaged.
- **Zener Diode**:
- **Forward Bias**: Similar to a PN junction diode, it has a small forward voltage drop (typically around 0.7V for silicon Zener diodes).
- **Reverse Bias**: Once the reverse voltage reaches the Zener voltage, the diode conducts, and the voltage across the diode remains almost constant (the Zener voltage) as the current increases. This property is used for **voltage regulation**.
### 4. **Applications**:
- **PN Junction Diode**:
- Used for general rectification (converting AC to DC).
- Protecting circuits by blocking reverse currents.
- In signal demodulation, signal clipping, and waveform shaping.
- **Zener Diode**:
- Primarily used for **voltage regulation**. It is commonly found in **voltage reference circuits**, **surge protection**, and **voltage clamping** applications.
- Used in **power supplies** to provide stable output voltage regardless of fluctuations in the input voltage.
### 5. **Breakdown Mechanism**:
- **PN Junction Diode**:
- In reverse bias, when the voltage exceeds the **reverse breakdown voltage** (which is typically much higher for standard diodes), the diode experiences avalanche breakdown. This causes a sudden increase in current, potentially damaging the diode.
- **Zener Diode**:
- The breakdown in a Zener diode is designed to be **Zener breakdown** (or **Avalanche breakdown** for higher voltage Zener diodes). This breakdown is controlled, and the Zener diode continues to operate without damage in this region. The Zener voltage is carefully chosen during manufacturing.
### 6. **Reverse Bias Behavior**:
- **PN Junction Diode**: In reverse bias, it blocks current until the reverse breakdown voltage is reached, which is typically very high (e.g., hundreds of volts for standard diodes).
- **Zener Diode**: Designed to conduct in reverse bias once the reverse voltage exceeds the **Zener voltage** (which is much lower than the reverse breakdown voltage of a regular diode), typically ranging from 2V to hundreds of volts.
### 7. **Symbol**:
- **PN Junction Diode**: The symbol for a regular diode is a triangle pointing toward a line.
- **Zener Diode**: The symbol for a Zener diode is similar to the regular diode symbol, but with two small lines across the diagonal of the triangle. This represents the diode's ability to break down and conduct in reverse at the Zener voltage.
### Summary Table
| Property | **PN Junction Diode** | **Zener Diode** |
|--------------------------|----------------------------------------------------------|------------------------------------------------------|
| **Type** | Basic semiconductor diode | Special diode designed for reverse breakdown region |
| **Forward Voltage Drop** | Around 0.7V for silicon | Similar, about 0.7V for silicon |
| **Reverse Bias** | Blocks current, can break down and get damaged | Allows controlled breakdown above Zener voltage |
| **Breakdown Region** | Avalanche breakdown (destructive) | Zener breakdown (controlled and non-destructive) |
| **Applications** | Rectifiers, signal processing, protection | Voltage regulation, surge protection, voltage clamping |
| **Reverse Voltage Behavior** | No conduction until reverse breakdown voltage is reached | Conducts once reverse voltage exceeds Zener voltage |
In conclusion, while both are diodes, the **Zener diode** is specifically designed to handle **reverse breakdown** in a controlled manner and is used for **voltage regulation**, whereas the **PN junction diode** is more commonly used for **rectification** and **blocking reverse current**.