A Bipolar Junction Transistor (BJT) consists of three layers of semiconductor material, each with a different doping concentration. These layers are:
1. **Emitter**: The emitter is the layer that injects charge carriers (electrons or holes) into the base. It is heavily doped to increase the number of charge carriers. In an NPN transistor, the emitter is N-type, and in a PNP transistor, it is P-type.
2. **Base**: The base is the thin middle layer that controls the flow of charge carriers between the emitter and the collector. It is lightly doped compared to the emitter and collector. The base has the opposite doping type compared to the emitter. For an NPN transistor, the base is P-type, and for a PNP transistor, the base is N-type.
3. **Collector**: The collector is the layer that collects the charge carriers coming from the emitter through the base. It is moderately doped. In an NPN transistor, the collector is N-type, and in a PNP transistor, the collector is P-type.
In summary:
- **Emitter**: Injects charge carriers
- **Base**: Controls the flow of charge carriers
- **Collector**: Collects the charge carriers
These three layers work together to allow the BJT to amplify electrical signals.