1 Answer
An **IGBT (Insulated Gate Bipolar Transistor)** is a **bipolar** device with a **unipolar** gate drive.
### Explanation:
- The **current conduction** in an IGBT happens through **both electrons and holes**, which makes it a **bipolar** device. This gives it a high current-carrying capacity and low conduction losses.
- However, the **gate is controlled by voltage** like a MOSFET, meaning it has a **unipolar** gate drive.
So, an IGBT combines the advantages of **MOSFETs (easy gate drive)** and **BJTs (low conduction losses due to bipolar operation)**.
### Explanation:
- The **current conduction** in an IGBT happens through **both electrons and holes**, which makes it a **bipolar** device. This gives it a high current-carrying capacity and low conduction losses.
- However, the **gate is controlled by voltage** like a MOSFET, meaning it has a **unipolar** gate drive.
So, an IGBT combines the advantages of **MOSFETs (easy gate drive)** and **BJTs (low conduction losses due to bipolar operation)**.