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A **BJT (Bipolar Junction Transistor)** has three main elements or regions:
1. **Emitter (E)**: This is where the charge carriers (electrons or holes) enter the transistor. It’s heavily doped to ensure it can supply a large number of charge carriers.
2. **Base (B)**: The base is the central region and is very thin compared to the emitter and collector. It controls the flow of charge carriers between the emitter and collector. The base is lightly doped.
3. **Collector (C)**: The collector is where the charge carriers exit the transistor. It's designed to collect the carriers from the emitter via the base, and it’s moderately doped.
These three regions work together to amplify electrical signals in a transistor. The **emitter** injects charge carriers into the **base**, and the **collector** gathers them, with the **base** acting as the controlling element in the flow of current.
1. **Emitter (E)**: This is where the charge carriers (electrons or holes) enter the transistor. It’s heavily doped to ensure it can supply a large number of charge carriers.
2. **Base (B)**: The base is the central region and is very thin compared to the emitter and collector. It controls the flow of charge carriers between the emitter and collector. The base is lightly doped.
3. **Collector (C)**: The collector is where the charge carriers exit the transistor. It's designed to collect the carriers from the emitter via the base, and it’s moderately doped.
These three regions work together to amplify electrical signals in a transistor. The **emitter** injects charge carriers into the **base**, and the **collector** gathers them, with the **base** acting as the controlling element in the flow of current.