The equation that describes the current-voltage (I-V) relationship of a
PN junction diode is the
Shockley diode equation. It is given by:
\[
I = I_S \left( e^{\frac{V}{nV_T}} - 1 \right)
\]
Where:
- I is the current through the diode.
- I_S is the reverse saturation current (a small current that flows through the diode when it's reverse-biased).
- V is the voltage applied across the diode (positive for forward bias, negative for reverse bias).
- n is the ideal factor, typically close to 1 for a silicon diode (it adjusts for non-ideal behavior).
- V_T is the thermal voltage, which is approximately 26 mV at room temperature (300 K).
Key points about the equation:
- In forward bias (positive voltage on the anode), the current increases exponentially with voltage, meaning the diode conducts more as voltage increases.
- In reverse bias (negative voltage on the anode), the current is very small (the term \( e^{\frac{V}{nV_T}} \) becomes very small), and the current is approximately equal to \( -I_S \), which is the reverse saturation current.
- The thermal voltage (V_T) depends on temperature and is approximately 26 mV at room temperature.
This equation shows how the diode behaves in terms of the current that flows through it when a voltage is applied.